SPACE-CHARGE-LIMITED CURRENTS IN INSULATORS WITH TWO SETS OF TRAPS DISTRIBUTED IN ENERGY: THEORY AND EXPERIMENT.RIZZO A; MICOCCI G; TEPORE A et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3415-3424; BIBL. 26 REF.Article

PHOTOCONDUCTIVITY OF INSE SINGLE CRYSTALSDE BLASI C; MICOCCI G; RIZZO A et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 291-296; ABS. GER; BIBL. 19 REF.Article

LARGE IN, SE SINGLE CRYSTALS GROWN FROM STOICHIOMETRIC AND NON-STOICHIOMETRIC MELTSDE BLASI C; MICOCCI G; MONGELLI S et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 3; PP. 482-486; BIBL. 25 REF.Article

ONE-CARRIER SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS WITH TWO SETS OF TRAPS DISTRIBUTED IN ENERGY: TWO PARTICULAR CASES.RIZZO A; DE BLASI C; GALASSINI S et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 6; PP. 3353-3358; BIBL. 16 REF.Article

Thermally stimulated current in Pbl₂ at low electric fieldsMICOCCI, G; TEPORE, A.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp K79-K82, issn 0031-8965Article

PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS SILICON FILMSAUGELLI V; MURRI R; GALASSINI S et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 3; PP. 315-320; BIBL. 10 REF.Article

HOLE CENTRES IN N-GASDE BLASI C; GALASSINI S; MICOCCI G et al.1980; PHYS STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 2; PP. 609-613; ABS. GER; BIBL. 7 REF.Article

EFFECTS OF SPACE-CHARGES ON THERMALLY STIMULATED CURRENTSDE BLASI C; GALASSINI S; MANFREDOTTI C et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 7; PP. 453-456; BIBL. 11 REF.Article

Electrical properties of vacuum-deposited polycrystalline InSe thin filmsMICOCCI, G; TEPORE, A; RELLA, R et al.Solar energy materials. 1991, Vol 22, Num 2-3, pp 215-222, issn 0165-1633Article

Influence of thermal annealing on the optical absorption and dark conductivity of amorphous gallium sulfide thin filmsMICOCCI, G; RELLA, R; TEPORE, A et al.Journal of applied physics. 1989, Vol 66, Num 5, pp 2114-2117, issn 0021-8979Article

ANALYSIS OF SCLC CURVES BY A NEW DIRECT METHOD.MANFREDOTTI C; DE BLASI C; GALASSINI S et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 2; PP. 569-577; ABS. ALLEM.; BIBL. 11 REF.Article

Photoconductivity in halogenated and hydrogenated amorphous silicon filmsMICOCCI, G; RIZZO, A; TEPORE, A et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp 609-614, issn 0031-8965Article

Isothermal currents in InSe, GaSe, and GaS single crystalsMICOCCI, G; RIZZO, A; TEPORE, A et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp 263-267, issn 0031-8965Article

TRAPPING LEVELS IN PBI₂.DE BLASI C; GALASSINI S; MANFREDOTTI C et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 3; PP. 149-153; BIBL. 19 REF.Article

Impurity levels in Sn-doped GaSe semiconductorMICOCCI, G; SERRA, A; TEPORE, A et al.Physica status solidi. A. Applied research. 1997, Vol 162, Num 2, pp 649-659, issn 0031-8965Article

Deep level transient spectroscopy measurements in InSe single crystalsMICOCCI, G; RIZZO, A; SICILIANO, P et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 1, pp 253-257, issn 0031-8965Article

Admittance spectroscopy of traps in Au-InSe Schottky cellsDI GIULIO, M; MICOCCI, G; TEPORE, A et al.Solid-state electronics. 1984, Vol 27, Num 11, pp 1015-1019, issn 0038-1101Article

Photoconductivity in halogenated and hydrogenated amorphous silicon films = Photoleitfaehigkeit in halogenierten und hydrierten amorphen Silizium-DuennschichtenMICOCCI, G; RIZZO, A; TEPORE, A et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp 609-614, issn 0031-8965Article

Photovoltaic effect in gold-indium selenide Schottky barriersDIGIUOGLIO, M; MICOCCI, G; RIZZO, A et al.Journal of applied physics. 1983, Vol 54, Num 10, pp 5839-5843, issn 0021-8979Article

One-carrier space-charge-limited-currents in non-homogeneous solids under planar, spherical and cylindrical flowDE BLASI, C; MICOCCI, G; RIZZO, A et al.Solid-state electronics. 1983, Vol 26, Num 11, pp 1095-1099, issn 0038-1101Article

Electrical properties of indium selenide single crystals doped with tinMICOCCI, G; TEPORE, A; RELLA, R et al.Solar energy materials and solar cells. 1992, Vol 26, Num 1-2, pp 159-167, issn 0927-0248Article

Investigation of deep levels in Zn-doped InSe single crystalsMICOCCI, G; TEPORE, A; RELLA, R et al.Journal of applied physics. 1992, Vol 71, Num 5, pp 2274-2279, issn 0021-8979Article

Impurity levels in As-doped indium selenide single crystalsMICOCCI, G; TEPORE, A; RELLA, R et al.Physica status solidi. A. Applied research. 1992, Vol 133, Num 2, pp 421-428, issn 0031-8965Article

Density of states in evaporated amorphous GaSe films using space-charge-limited current measurementsMICOCCI, G; SICILIANO, P; TEPORE, A et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 1885-1888, issn 0021-8979Article

AC electrical conductivity in amorphous indium selenide thin filmsDI GIULIO, H; RELLA, R; TEPORE, A et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp K35-K39, issn 0031-8965Article